Investigation of photoresist-specific optical proximity effect

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 133-136

  Arthur, Graham ^a   Martin, Brian ^b  

^a RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^b Plessey Semiconductors   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COMPUTER SOFTWARE; DENSITY (OPTICAL); OPACITY; PHOTOLITHOGRAPHY; ULTRAVIOLET RADIATION;

CRITICAL DIMENSIONS; DEPTH OF FOCUS; MACK PARAMETER; OPTICAL PROXIMITY CORRECTION; OPTICAL PROXIMITY EFFECTS; RESIST SELECTION CRITERIA;

PHOTORESISTS;

EID: 0029734901     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00211-1     Document Type: Article

References (3)

1. Arthur, G., Martin, B., "Effect of Stepper Lens Operating Conditions on Proximity Effects in DUV Optical Lithography down to 250nm," Micro-and Nano-Engineering '95, Aix-en-Provence, 1995.
2. Dill, F.H. et al, "Characterisation of Positive Photoresist." IEEE Transactions on Electron Devices, Vol. ED-22, No 7 pp445-452, July 1975.
3. Mack, C., "A Comprehensive Optical Lithography Model," Optical Microlithography IV, Proc., SPIE Vol. 538 pp. 207-220, 1985.