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Volumn 405, Issue , 1996, Pages 215-220
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Photoluminescence properties of Er-doped porous silicon
a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
ERBIUM;
ION IMPLANTATION;
NANOSTRUCTURED MATERIALS;
PHOTOLUMINESCENCE;
POROSITY;
SEMICONDUCTOR DOPING;
EXCITATION MECHANISMS;
POROUS SILICON;
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EID: 0029726980
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (2)
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References (11)
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