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Applied Physics Letters

Volumn 56, Issue 9, 1990, Pages 851-853

High sensitivity low dark current 10 μm GaAs quantum well infrared photodetectors

(7) Levine, B F a Bethea, C G a Hasnain, G a Shen, V O a Pelve, E a Abbott, R R a Hsieh, S J a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549098767 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.102682 Document Type: Article

Times cited : (313)

References (24)

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- The parameters were varied within the experiment errors to optimize the fit. The values used were [Formula Omitted] [Formula Omitted] [Formula Omitted] and [Formula Omitted] [Formula Omitted] and [Formula Omitted] for samples A and B, respectively.

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- It is important to emphasize that since all our previous data were consistent with [Formula Omitted] our earlier results are not significantly affected by this. In particular, only the numerical values of L and τ used to fit the theory of Ref. 15 are slightly changed. All the important conclusions concerning the origin of the ballistic transport resonances remain unchanged.

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