Segregation of Si δ doping in GaAs-AlGaAs quantum wells and the cause of the asymmetry in the current-voltage characteristics of intersubband infrared detectors

Applied Physics Letters

Volumn 63, Issue 6, 1993, Pages 761-763

  Liu, H C ^a   Wasilewski, Z R ^a   Buchanan, M ^a   Chu, Hanyou ^b  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF ALBERTA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36449007418     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.109900     Document Type: Article

References (12)