Saturation measurements of electrically detected magnetic resonance in hydrogenated amorphous silicon based thin-film transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 1 A, 1997, Pages 121-125

  Kawachi, Genshiro ^a   Graeff, Carlos F O ^b,c   Brandt, Martin S ^b   Stutzmann, Martin ^b  

^a HITACHI LTD   (Japan)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

a Si:H TFTs; Electrically detected magnetic resonance; Hydrogenated amorphous silicon; Microstrip resonator; Thin film transistors

Indexed keywords

ELECTRICALLY DETECTED MAGNETIC RESONANCE (EDMR);

AMORPHOUS SILICON; ELECTROMAGNETIC FIELD EFFECTS; GATES (TRANSISTOR); HYDROGENATION; MAGNETIC RESONANCE; MICROSTRIP DEVICES; RESONATORS;

THIN FILM TRANSISTORS;

EID: 0030679201     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.36.121     Document Type: Article

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