Spin-dependent transport in amorphous silicon thin-film transistors

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1117-1120

  Graeff, C F O ^a   Kawachi, G ^a,c   Brandt, M S ^a   Stutzmann, M ^a   Powell, M J ^b  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; DEFECTS; DEGRADATION; GATES (TRANSISTOR); PHOTOCONDUCTIVITY;

LIGHT SOAKING; SPIN DEPENDENT TRANSPORT; THRESHOLD VOLTAGE SHIFTS;

THIN FILM TRANSISTORS;

EID: 17144447953     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00059-2     Document Type: Article

References (7)

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7. G. Kawachi, C.F.O. Graeff, M.S. Brandt and M. Stutzmann, to be published.