ZnSe-facet-passivated InGaAs/InGaAsP/ InGaP diode lasers of high CW power and 'wallplug' efficiency

Electronics Letters

Volumn 32, Issue 4, 1996, Pages 352-354

  Syrbu, A V ^a   Yakovlev, V P ^a   Suruceanu, G I ^a   Mereutza, A Z ^a   Mawst, L J ^b   Bhattacharya, A ^b   Nesnidal, M ^b   Lopez, J ^b   Botez, D ^b  

^a TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Lasers; Semiconductor junction lasers

Indexed keywords

COATINGS; CONTINUOUS WAVE LASERS; EFFICIENCY; ENERGY CONVERSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PASSIVATION; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS;

CONTINUOUS WAVE POWER CONVERSION EFFICIENCY; CONTINUOUS WAVE WALL PLUG EFFICIENCY; DIELECTRIC COATINGS; FACETS; FRONT FACET EMITTED POWER;

SEMICONDUCTOR LASERS;

EID: 0030085248     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960251     Document Type: Article

References (12)

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