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Volumn 58, Issue 1, 1997, Pages 43-50

Micromachined thermally isolated circuits

Author keywords

Micromachining; Thermal isolation

Indexed keywords

ETCHING; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING SILICON; TEMPERATURE CONTROL; THERMAL CONDUCTIVITY;

EID: 0030647412     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)80223-3     Document Type: Article
Times cited : (40)

References (20)
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  • 5
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    • (1993) CMOS Flow Sensors , pp. 96
    • Moser, D.1
  • 8
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    • Bulk micromachining of standard CMOS using silicic acid added to TMAH for aluminum passivation
    • TRN 95-13, June
    • G. Lin, B. Eyre and K. Pister, Bulk micromachining of standard CMOS using silicic acid added to TMAH for aluminum passivation, UCLA MEMS Laboratory Internal Report, TRN 95-13, June 1995.
    • (1995) UCLA MEMS Laboratory Internal Report
    • Lin, G.1    Eyre, B.2    Pister, K.3
  • 9
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  • 13
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    • Inhibition of pyramid formation in the etching of Si p〈100〉 in aqueous potassium hydroxide-isopropanol
    • S.A. Campbell, K. Cooper, L. Dixon, R. Earwaker, S.N. Port and DJ. Schiffrin, Inhibition of pyramid formation in the etching of Si p〈100〉 in aqueous potassium hydroxide-isopropanol, J. Micromech. Microeng., 5 (1995) 209-218.
    • (1995) J. Micromech. Microeng. , vol.5 , pp. 209-218
    • Campbell, S.A.1    Cooper, K.2    Dixon, L.3    Earwaker, R.4    Port, S.N.5    Schiffrin, D.J.6
  • 14
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    • Anisotropic etching of silicon and germanium, US Patent No. 3 738 881 (June 12, 1973)
    • W.C. Erdman and P.F. Schmidt, Anisotropic etching of silicon and germanium, US Patent No. 3 738 881 (June 12, 1973).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.