Manufacturing with DUV lithography

IBM Journal of Research and Development

Volumn 41, Issue 1-2, 1997, Pages 7-18

  Holmes, S J ^a   Mitchell, P H ^a   Hakey, M C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT MANUFACTURE; LOGIC GATES; MICROELECTRONIC PROCESSING; RANDOM ACCESS STORAGE; ULTRAVIOLET RADIATION;

DEEP ULTRAVIOLET (DUV) LITHOGRAPHY; DYNAMIC RANDOM ACCESS MEMORIES (DRAM);

PHOTOLITHOGRAPHY;

EID: 0030646207     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.411.0007     Document Type: Article

References (27)

1. J. D. Buckley, "Expanding the Horizons of Optical Projection Lithography," Solid State Technol. 25, 77-82 (May 1982).
2. M. Hakey and W. Straub, "Advanced 1X Projection Lithography," J. Electron. Mater. 11, 813-830 (1982).
3. (a) H. Ito and C. G. Willson, Polym. Eng. Sci. 23, 1012-1018 (1983).
4. (b) H. Ito and C. G. Willson, in Polymers and Electronics, ACS Symposium Series, No. 242, T. Davidson, Ed., American Chemical Society, Washington, DC, 1984, pp. 11-23.
5. (c) H. Ito, J. Frechet, and C. G. Willson, "Positive- and Negative-Working Resist Compositions with Acid Generating Photoinitiator and Polymer with Acid Labile Groups Pendant from Polymer Backbone," U.S. Patent 4,491,628, 1985.
6. H. Ito, "Chemical Amplification Resists: History and Development Within IBM," IBM J. Res. Develop. 41, 69-80 (1997, this issue).
7. J. Maltabes, S. Holmes, J. Morrow, R. Barr, M. Hakey, G. Reynolds, W. Brunsvold, C. G. Willson, N. Clecak, S. MacDonald, and H. Ito, "1X Deep UV Lithography with Chemical Amplification for 1-Mbit DRAM Production," Proc. SPIE 1262, 2-7 (1990).
8. H. Ito, "Chemically Amplified Resists - History and Recent Progress," Proceedings of the 10th International Conference on Photopolymers, Mid-Hudson Section, Society of Plastics Engineers, 1994, pp. 1-11.
9. J. Sturtevant, S. Holmes, and P. Rabidoux, "Post-Exposure Bake Characteristics of a Chemically Amplified Deep-Ultraviolet Resist," Proc. SPIE 1672, 114-124 (1992).
10. S. MacDonald, N. Clecak, R. Wendt, C. G. Willson, C. Snyder, C. Knors, N. Deyoe, J. Maltabes, J. Morrow, A. McGuire, and S. Holmes, "Airborne Chemical Contamination of a Chemically Amplified Resist," Proc. SPIE 1466, 2-12 (1991).
11. D. E. Seeger, D. C. La Tulipe, Jr., R. R. Kunz, C. M. Garza, and M. A. Hanratty, "Thin-Film Imaging: Past, Present, Prognosis," IBM J. Res. Develop. 41, 105-118 (1997, this issue).
12. (a) S, Holmes, R. Levy, A. Bergendahl, K. Holland, J. Maltabes, S. Knight, K. C. Norris, and D. Poley, "Deep Ultraviolet Lithography for 500-nm Devices," Proc. SPIE 1264, 61 (1990).
13. (b) S. Holmes, A. Bergendahl, D. Dunn, M. Hakey, K. Holland, D. Humphrey, S. Knight, D. Poley, P. Rabidoux, K. C. Norris, J. Sturtevant, and D. Writer, "Deep UV Lithography for the Manufacture of 16-Mb DRAM Devices," Proc. SPIE 1671, 57 (1992).
14. (c) J. Sturtevant and S. Holmes, "Deep-UV Lithography in 16-Mbit DRAM Manufacturing," Microlithography World, pp. 17-22 (August 1993).
15. J. Sturtevant, S. Holmes, T. Van Kessel, P. Hobbs, J. Shaw, and R. Jackson, "Post Exposure Bake as a Process Control Parameter for Chemically Amplified Photoresist," Proc. SPIE 1926 (1993).
16. W.-S. Huang, R. Kwong, A. Katnani, M. Khojasteh, and K. Lee, "An Environmentally Robust Positive Tone Chemically Amplified Resist - KRS," Proceedings of the 10th International Conference on Photopolymers, Mid-Hudson Section, Society of Plastics Engineers, 1994, pp. 96-106.
17. (a) S. Holmes, D. Sundling, J. Adkisson, J. Sturtevant, M. Hakey, D. Horak, W. Conley, and A. Katnani, "Gate Conductor Lithography for 350-nm Devices," Proceedings of the 10th International Conference on Photopolymers, Mid-Hudson Section, Society of Plastics Engineers, 1994, pp. 396-405.
18. (b) S. Holmes, M. Hakey, J. Sturtevant, and D. Dunn, "Overview of DUV Lithography for 350-nm CMOS Device Fabrication," Proceedings, Semicon/Kansai-Kyoto '93 Technology Seminar, 1993, pp. 85-96.
19. D. G. Chesebro, J. W. Adkisson, L. R. Clark, S. N. Eslinger, M. A. Faucher, S. J. Holmes, R. P. Mallette, E. J. Nowak, E. W. Sengle, S. H. Voldman, and T. W. Weeks, "Overview of Gate Linewidth Control in the Manufacture of CMOS Logic Chips," IBM J. Res. Develop. 39, 189-200 (1995).
20. C. A. Mack and J. E. Connors, "Fundamental Differences Between Positive and Negative Tone Imaging," Proc. SPIE 1674, 328 (1992).
21. (a) W. Conley, R. Sooriyakumaran, J. Gelorme, S. Holmes, M. Petryniak, R. Ferguson, R. Martino, P. Rabidoux, and J. Sturtevant, "Negative Tone Deep-UV Resist for 16-Mb DRAM Production and Future Generations," Proc. SPIE 1925, 11 (1993).
22. (b) W. R. Brunsvold, W. E. Conley, J. D. Gelorme, R. Nunes, R. Sooriyakumaran, S. J. Holmes, and J. L. Sturtevant, "Further Improvements in CGR Formulation and Process," Proc. SPIE 2195, 329-340 (1994).
23. D. A. Markle, "The Future and Potential of Optical Scanning Systems," Solid State Technol. 27, 165 (1984).
24. C. Karatzas and J. D. Buckley, "Step-and-Scan: A Systems Overview of a New Lithography Tool," Proc. SPIE 1088, 424-433 (1989).
25. H. Sewell, "Step-and-Scan: The Maturing Technology," Proc. SPIE 2440, 49-60 (1995).
26. M. D. Levenson, P. J. Silverman, R. George, S. Wittekoek, P. Ware, C. Sparkes, L. Thompson, P. Bischoff, A. Dickinson, and J. Shamaly, "Welcome to the DUV Revolution," Solid State Technol. 38, 81-98 (1995).
27. M. Hibbs, R. Kunz, and M. Rothschild, "193-nm Lithography at MIT Lincoln Lab," Solid State Technol. 38, 69-78 (1995).