Dependence of lifetime of II-VI semiconductor lasers on output power for different mounting configurations

Electronics Letters

Volumn 32, Issue 14, 1996, Pages 1290-1291

  Buijs, M ^a   Haberern, K ^a   Marshall, T ^a   Law, K K ^b   Baude, P F ^b   Miller, T J ^b   Haase, M A ^b   Haugen, G M ^b   Horikx, J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b 3M COMPANY   (United States)

Author keywords

II VI semiconductors; Semiconductor junction lasers

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

EPI DOWN MOUNTING; EPI UP MOUNTING; LASING THRESHOLD; MOUNTING CONFIGURATIONS; OUTPUT POWER; SEMICONDUCTOR JUNCTION LASERS;

SEMICONDUCTOR LASERS;

EID: 0030568688     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960846     Document Type: Article

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