III-V Nitrides for Electronic and Optoelectronic Applications

Proceedings of the IEEE

Volumn 79, Issue 5, 1991, Pages 702-712

  Davis, Robert F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTOELECTRONIC DEVICES - MATERIALS; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; SOLID SOLUTIONS;

111-V NITRIDE THIN-FILM MATERIALS; ALUMINUM NITRIDE; CUBIC BORON NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE;

NITRIDES;

EID: 0026151830     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/5.90133     Document Type: Article

References (76)

1. Wentorf, R. H. Jr., “Synthesis of cubic form of boron nitride,” J. Chem. Phys. vol. 36, pp. 1990–1998, Mar. 1961.
2. R. C. Devries, “Cubic boron nitride: Handbook of properties,” Tech. Rep. 72 CRD178, General Electric Company, Schenec-tady, NY 12301, pp. 1–17, June 1972.
3. M. Sokolowski, “Deposition of wurtzite type boron nitride layers by reactive pulse plasma crystallization,” J. Cryst. Growth, vol. 46, pp. 136–138, Jan. 1979
4. H-J. Erler, G. Reisse, and C. Weissmantel, “Nitride film deposition by reactive ion beam sputtering,” Thin Solid Films, vol. 65, pp. 233–245, Jan. 15, 1980.
5. C. Weissmantel, “Ion beam deposition of special film structures,” J. Vac. Sci. Technol, vol. 18, pp. 179–185, Mar. 1981.
6. C. Weissmantel, K. Bewilgova, K. Bruer, D. Dietrich, U. Ebersbach, H-J. Erler, B. Rau, and G. Reisse, “Preparation and properties of hard i-C and i-BN coatings,” Thin Solid Films, vol. 96, pp. 31–38, 1982.
7. S. Shanfield, and R. Wolfson, “Ion beam synthesis of cubic boron nitride,” J. Vac. Sci. Technol. A, vol. 1, pp. 323–332, Apr.-June 1983.
8. M. Satou and F. Fujimoto, “Formation of cubic boron nitride films by boron evaporation and nitrogen ion beam bombardment,” Japan. J. Appl. Phys., vol. 22, pp. L171-L172, Mar. 1983.
9. K. L. Chopra, V. Agrawal, V. D. Vankar, C. V. Deshpandey, and R. F. Bunshah, “Synthesis of cubic boron nitrite films by activated reactive evaporation of H3BO3,” Thin Solid Films, vol. 126, pp. 307–315, 1985.
10. P. Lin, C. Deshpandey, H. J. Doerr, R. F. Bunshah, K. L. Chopra, and V. D. Vankar, “Preparation and properties of cubic boron nitride coatings,” Thin Solid Films, vol. 152, pp. 487–496, 1987.
11. K. Inagawa, K. Watanabe, H. Ohsone, K. Saitoh, and A. Itoh, “Preparation of cubic boron nitride film by activated reactive evaporation,” J. Vac. Sci. Technol. A, vol, 5, pp. 2696–2702, July/Aug. 1987.
12. T. Ikeda, Y. Kawate, and Y. Hirai, “Formation of cBN films by arc-like plasma-enhanced ion plating method,” Kobelco Technol. Rev., vol. 6, pp. 1–4, Aug. 1989.
13. H. D. Wiggins, C. R. Aita, and F. S. Hickernell, “Radio frequency sputter deposited boron nitride films,” J. Vac. Sci. Technol., vol. A2, pp. 322–325, Apr.-June 1984.
14. K. H. Seidel, K. Reichelt, W. Schaal, and H. Dimigen, “The preparation of cubic boron nitride films by reactive diode sputtering,” Thin Solid Films, vol. 156, pp. 215–230, 1987.
15. S. P. S. Arya and A. D’Amico, “Preparation, properties and applications of boron nitride thin films,” Thin Solid Films, vol. 157, pp. 267–282, Feb. 29, 1988.
16. G. L. Doll, J. A. Sell, L. Salamanca-Riba, and A. K. Bullal, “Laser deposited cubic boron nitride films,” Appl. Phys. Lett., to be published.
17. O. Mishima, J. Tanaka, S. Yamaoaka, and O. Fukunaga, “High-temperature cubic boron nitride p-n junction diode made at high pressure,” Science, vol. 238, pp. 181–186, Feb. 1987.
18. O. Mishima, K. Era, J. Tanaka, and S. Yamaoka, “Ultraviolet light-emitting diode of a cubic boron nitride p-n junction made at high pressure,” Appl. Phys. Lett., vol. 53, pp. 962–964, July 1988, and private discussions.
19. W. M. Yim, E. J. Stofko, P. J. Zanzucchi, J. I. Pankove, M. Ettenberg, and S. L. Gilbert, “Epitaxially grown AIN and its optical bandgap,” J. Appl. Phys., vol. 44, pp. 292–296, Jan. 1973.
20. Y. Fujii, S. Yoshida, S. Misawa, S. Maekawa, and T. Sakudo, “Nonlinear Optical Susceptibilities of AIN film,” Appl. Phys. Lett., vol. 31, pp. 815–817, Dec. 15, 1977.
21. G. R. Kline, and K. M. Lakin, “Composite thin film UHF bulk acoustic wave resonators on gallium arsenide,” in Proc. IEEE Symp. Ultrasonics, vol. 14, pp. 495–453, 1983.
22. M. Kitayama, T. Fukui, T. Shiosaki, and A. Kawabata, “VHF/UHF composite resonator on a silicon substrate,” Japan. J. Appl. Phys., pt. 1, vol. 22 (supplement 22–23), pp. 139–143, Jan. 1982.
23. K. Tsubouchi, K. Sugai, and Mikoshiba “Zero temperature coefficient surface-acoustic-wave devices using epitaxial aluminum nitride films,” in Proc. IEEE Symp. Ultrasonics, vol. 14, pp. 340–346, 1983.
24. M. Sano and M. Aoki, “Properties of III-V nitride semiconductors,” Oyo Butsuri, vol. 52, pp. 374–376, June 1983, in Japanese.
25. M. G. Norton, B. C. H. Steele, and C. A. Leach, “Characterisation and metallisation of AIN ceramics,” Science of Ceramics, vol. 14, pp. 545–550, Sept. 1988.
26. L. Cartz, F. G. Karioris, and R. A. Foumelle, “Heavy ion bombardment of silicates and nitrides,” Rad. Effects, vol. 54, pp. 57–64, 1981.
27. M. Morita, S. Isogai, N. Shimizu, K. Tsubouchi, and N. Mikoshiba, “Aluminum nitride epitaxially grown on silicon: orientation relationships,” Japan. J. Appl. Phys., vol. 20, pp. L173-L175, Mar. 1981.
28. M. T. Duffy in Heteroepitaxial Semiconductors for Electronic Devices, G. W. Cullen and C. C. Wang, Eds. New York: Springer-Verlag, pp. 150–181, 1978.
29. G. A. Cox, D. O. Cummins, K. Kawabe, and T. Tredgold, On the preparation, optical properties and electrical behavior of an aluminum nitride,” J. Phys. Chem. Solids, vol. 28, pp. 543–551, Apr. 1967.
30. T. L. Chu, D. W. Ing, and A. J. Noreika, “Epitaxial growth of aluminum nitride,” Solid-State Electron., vol. 10, pp. 1023–1027, Oct. 1967.
31. A. J. Noreika and D. W. Ing, “Growth characteristics of AIN films pyrolytically deposited on Si,” J. Appl. Phys., vol. 39, pp. 5578–5584, Nov. 1968.
32. H. M. Manasevit, F. M. Erdmann, and W. I. Simpson, “The use of metalorganics in the preparation of semiconductor materials,” J. Electrochem. Soc., vol. 118, pp. 1864—1868, 1971.
33. M. T. Duffy, C. C. Wang, G. D. O’Clock, Jr., S. H. McFarlane III, and P. J. Zanzucchi, “Epitaxial growth and piezoelectric properties of aluminum nitride and gallium arsenide on sapphire or spinel,” J. Electron. Mater., vol. 2, pp. 359–370, 1973.
34. K. M. Lakin, L. Liu, and K. Wang, “Aluminum nitride on sapphire,” in Proc. Ultrasonics Symp., 1974, pp. 302–325.
35. M. P. Callaghan, E. Patterson, B. P. Richards, and C. A. Wallace, “The growth, crystallographic and electrical assessment of epitaxial layers of aluminum nitride on corundium substrates,” J. Cryst. Growth, vol. 22, pp. 85–98, Apr. 1974.
36. F. A. Pizzarello and J. E. Coker, “The structural and piezoelectric properties of epitaxial AIN on AI2O3,” J. Electron. Mater., vol. 4, pp. 25–36, Feb. 1975.
37. J. K. Liu, K. M. Lakin, and K. L. Wang, “Growth morphology and surface-acoustic wave measurements of AIN on sapphire,” J. Appl. Phys., vol. 46, 3703–3706, Sept. 1975.
38. J. M. E. Harper, J. J. Cuomo, and H. T. G. Hentzell, “Synthesis of compound thin films by dual ion beam deposition I: Experimental Approach; II: Properties of aluminum-nitrogen films,” J. Appl. Phys., vol. 58, pp. 550–560, July 1985.
39. xN,’V. Electron. Mater., vol. 14, pp. 633–644, Sept. 1985.
40. H. Itoh, M. Kato and K. Sugiyama, “Plasma-enhanced chemical vapor deposition of AIN coatings on graphite substrates,” Thin Solid Films, vol. 146, pp. 255–264, 1987.
41. P. M. Dryburgh, “Factors affecting the growth of aluminum nitride layers on sapphire by the reaction of nitrogen with aluminum maroselenide,” J. Crystal Growth, vol. 94, pp. 23–33, Jan. 1989.
42. R. F. Davis, Z. Sitar, B. E. Williams, H. S. Kong, H. J. Kim, J. W. Palmour, J. A. Edmond, J. Ryu, J. T. Glass, and C. H. Carter, Jr., “Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide,” Materials Science and Engineering B, vol. 1, pp. 77–104, July 1988.
43. J. I. Pancove, “Perspective on gallium nitride,” in Materials Research Soc. Symp. Proc., vol. 116, J. T. Glass, R. F. Messier, and N. Fujimori, Eds. Pittsburgh, PA: Materials Research Society, 1990, pp. 515–524.
44. M. Mizuta, S. Fujieda, Y. Matsumoto, and T. Kawamara, “Low temperature growth of GaN and AIN on GaAs utilizing metalorganics and hydrazine,” Japan. J. Appl. Phys., vol. 25, pp. L945-L948, Dec. 1986.
45. M. J. Paisley, Z. Sitar, J. B. Posthill, and R. F. Davis, “Growth of cubic phase gallium nitride by modified molecular beam epitaxy,”j. Vac. Sci. Technol. A, vol. 7, pp. 701–704, Apr. 1989.
46. R. C. Powell, G. A. Tomasch, Y.-W. Kim, J. A. Thornton, and J. E. Greene, “Growth of high-resistivity wurtzite and zincblende structure single crystal GaN by reactive-ion molecular beam epitaxy,” in Materials Research Soc. Symp. Proc., vol. 162, J. T. Glass, R. F. Messier, and N. Fujimori, Eds. Pittsburgh, PA: Materials Research Society, 1990, pp. 525–530.
47. H. Morkoc, private communication.
48. T. P. Humphreys, C. A. Sukow, R. J. Nemanich, J. B. Posthill, R. A. Rudder, S. V. Hattangady, and R. J. Markunas, “Mi-crostructural and optical characterization of GaN films grown by PECVD on (0001) sapphire substrates,” in Materials Research Soc. Symp. Proc., vol. 162, J. T. Glass, R. F. Messier, and N. Fujimori, Eds. Pittsburgh, PA: Materials Research Society, 1990, pp. 531–536.
49. S. Yoshida, S. Misawa, and S. Gonda, “Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates,” Appl. Phys. Lett., vol. 42, pp. 427-429 Mar. 1983.
50. S. Yoshida, S. Misawa, and S. Gonda, “Epitaxial growth of GaN/AIN heterostructures,” J. Vac. Sci. Technol. B, vol. 1, pp. 250–253, Mar. 1983.
51. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AIN buffer layer,” Appl. Phys. Lett., vol. 48, pp. 353–355, Feb. 1986.
52. XN (0
53. M. A. Khan, J. N. Kuznia, J. M. Van Hove, D. T. Olson, S. Krishnankutty, and R. M. Kolbas, “Growth of high optical and electrical quality GaN layers using low pressure metal-organic chemical vapor deposition,” Appl. Phy. Lett., vol. 58, pp. 526–527, 1991.
54. M. A. Khan, D. T. Olson, J. M. Van Hove, and J. N. Kuznia, “Vertical cavity room temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low pressure metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 58, pp. 1515–1517, Apr. 1991.
55. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron-beam irradiation (LEEBI),” Japan. J. Appl. Phys., vol. 28, pp. L2112-L2114, Dec. 1989.
56. H. Amano, I. Akasaki, T. Kozawa, K. Hiramatsu, N. Sawaki, K. Ikeda, and Y. Ishii, “Electron beam effects on blue luminescence in Zn-doped GaN,” J. Lumin., vols. 40 and 41, pp. 121–122, 1988.
57. H. Amano, T. Asahi, and I. Akasaki, “Stimulated emission from a GaN film “Japan. J. App. Phys. Lett., vol. 28, pp. L150-L163, Feb. 1990.
58. A. Kahn, APA Optics, Inc., private communication.
59. xN epitaxial layers,” Phys. Status Solidi A, vol. 49, pp. L143-L146, Oct. 1978.
60. xN compounds”, J. Phys. C, vol. 11, pp. L143-L148, Feb. 1978.
61. xN films prepared by reactive molecular beam epitaxy,” J. Appl. Phys., vol. 53, pp. 6844–6848, Oct. 1982.
62. M. A. Khan, R. A. Skogman, R. G. Schulze, and M. Gershenzon, “Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 42, pp. 430–432, Mar. 1983.
63. 3,” J. Cryst. Growth, vol. 77, pp. 424-429, Sept. 1986.
64. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatu, N. Sawaki, and I. Akasaki, “Energy band-gap bowing parameter in an AlxGaj.xN alloy,”/. Appl. Phys., vol. 61, pp. 4540–4543, May 1987.
65. M. A. Khan, R. A. Skogman, J. M. Van Hove, S. Krishnankutty, and R. M. Kolbas, “Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells,” Appl. Phys. Lett., vol. 56, pp. 1257–1259, Mar. 1990.
66. KN heterostructures grown by low pressure metalorganic chemical vapor deposition,” Appl. Phys. Lett., to be published.
67. S. Hiyamizu, T. Mimura, T. Fuji, and K. Nanbu, “High mobility of two-dimensional electrons at the GaAs/n-AlGaAs heterojunction interface,” Appl. Phys. Lett., vol. 37, pp. 805–807, Nov. 1980.
68. Z. Sitar, M. J. Paisley, B. Yan, J. Ruan, and J. W. Choyke, and R. F. Davis, “Growth of AlN/GaN layered structures by gas-source molecular beam epitaxy,” J. Vac. Sci. Technol. B, vol. 8, pp. 316–322, Mar./Apr. 1989.
69. J. B. MacChesney, P. M. Bridenbaugh, and P. B. O’Connor, “Thermal stability of indium nitride at elevated temperatures and nitrogen pressures,” Mater. Res. Bull., vol. 5, pp. 783–792, June 1970.
70. H. J. Hovel, and J. J. Cuomo, “Electrical and optical properties of RF-sputtered GaN and InN,” Appl. Phys. Lett., vol. 20, pp. 71–73, Jan. 1972.
71. 2-02 discharges,” Thin Solid Films, vol. 68, pp. 201–235, 1979.
72. T. L. Tansley and C. P. Foley, “Optical bandgap of indium nitride,”/. Appl. Phys., vol. 59, pp. 3241–3244, May 1986.
73. B. T. Sullivan, R. R. Parsons, K. L. Westra, and M. J. Brett, “Optical properties and microstructure of reactively sputtered indium nitride thin films,” J. Appl. Phys., vol. 64, pp. 4144–4149, Oct. 1988.
74. J. W. Trainor and K. Rose, “Some properties of InN films prepared by reactive evaporation,” J. Electronic Mater., vol. 3, pp. 821–828, Apr. 1974.
75. 3 System,” Krist Technol., vol. 12, pp. 541–545, June 1977.
76. S. Masaki, K. Sudou, H. Kobayashi, and H. Morisaki, in Proc. Twelfth Symp. Ion Sources and ion-Assisted Technol, T. Takagi Ed., published as a collection of papers by the Research group on Ion Engineering, Kyoto University, Kyoto, Japan, 1989, pp. 391–394.