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Volumn 185, Issue 1-4, 1993, Pages 415-421

Electronic structure, surface composition and long-range order in GaN

(11) Hunt, R W a Vanzetti, L a,b Castro, T a Chen, K M a Sorba, L b Cohen, P I a Gladfelter, W a Van Hove, J M c Kuznia, J N c Khan, M Asif c Franciosi, A a,b

a UNIVERSITY OF MINNESOTA (United States)

b LABORATORIO TASC (Italy)

c APA Optronics (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARGON; BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; COMPOSITION; CRYSTAL ATOMIC STRUCTURE; NITRIDES; NITROGEN; SPUTTERING; SURFACES; THIN FILMS; XENON;

ELECTRONIC DENSITY OF STATES; GALLIUM NITRIDE; HEXAGONAL THIN FILMS; NITROGEN SURFACE DEPLETION REDUCTION; QUASISTOICHIOMETRIC ORDERED SURFACES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE SUBSTRATES; SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0027575320 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/0921-4526(93)90271-7 Document Type: Article

Times cited : (72)

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