Temperature dependence of the radiation induced change of depletion voltage in silicon PIN detectors

Nuclear Inst. and Methods in Physics Research, A

Volumn 342, Issue 1, 1994, Pages 96-104

  Ziock, H J ^a   Holzscheiter, K ^a   Morgan, A ^a   Palounek, A P T ^a   Ellison, J ^b   Heinson, A P ^b   Mason, M ^b   Wimpenny, S J ^b   Barberis, E ^c   Cartiglia, N ^c   Grillo, A ^c   O'Shaughnessy, K ^c   Rahn, J ^c   Rinaldi, P ^c   Rowe, W A ^c   Sadrozinski, H F W ^c   Seiden, A ^c   Spencer, E ^c   Webster, A ^c   Wichmann, R ^c   Wilder, M ^c   Frautschi, M A ^d   Matthews, J A J ^d   McDonald, D ^d   Skinner, D ^d   Coupal, D ^e   Pal, T ^e   more..

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF CALIFORNIA SANTA CRUZ   (United States)

^d UNIVERSITY OF NEW MEXICO   (United States)

^e Superconducting Super Collider Laboratory   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DETECTORS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; PROTONS; RADIATION DAMAGE; SHOT NOISE; THERMAL EFFECTS;

DEPLETION VOLTAGE; PROTON FLUENCE; SILICON PIN DIODES; TEMPERATURE DEPENDENCE; THERMAL RUNAWAY;

SILICON SENSORS;

EID: 0028391944     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(94)91415-X     Document Type: Article

References (13)

1. Radiation damage in silicon detectors
2. Radiation damage in silicon strip detectors
3. Int. Symp. on Development and Application of Semiconductor Tracking Detectors
4. Temperature dependence of radiation damage and its annealing in silicon detectors