Comparison of Zn1-xMnxTe/ZnTe multiple-quantum wells and quantum dots by below-bandgap photomodulated reflectivity

Semiconductor Science and Technology

Volumn 11, Issue 12, 1996, Pages 1863-1872

  Klar, P J ^a   Wolverson, D ^a   Ashenford, D E ^b   Lunn, B ^b   Henning, Torsten ^c  

^a UNIVERSITY OF EAST ANGLIA   (United Kingdom)

^b UNIVERSITY OF HULL   (United Kingdom)

^c UNIVERSITY OF GOTHENBURG   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BELOW BANDGAP PHOTOMODULATED REFLECTIVITY; ION BEAM ETCHING; TRANSITION ENERGIES;

ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSITIONS; ENERGY GAP; ETCHING; EXCITONS; HETEROJUNCTIONS; ION BEAM LITHOGRAPHY; LIGHT REFLECTION; NANOTECHNOLOGY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; STRAIN;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030399643     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/12/017     Document Type: Review

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