Fabrication and characterisation of dry etched CdTe/CdMnTe quantum dots

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 434-437

  Ribayrol, A ^a   Tang, Y S ^b   Zhou, H P ^b   Coquillat, D ^a   Sotomayor Torres, C M ^b   Lascaray, J P ^a   Lunn, B ^c   Ashenford, D E ^c   Feuillet, G ^d   Cibert, J ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF HULL   (United Kingdom)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; DRY ETCHING; EFFECTS; FABRICATION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

ELECTRON BEAM PATTERNING; PHOTOREFLECTANCE; QUANTUM CONFINEMENT; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRAIN RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0030562242     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00678-8     Document Type: Article

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