IR laser-induced chemical vapour deposition of silicon oxycarbide phases from 1,1,3,3-tetramethyldisiloxane

Journal of Analytical and Applied Pyrolysis

Volumn 38, Issue 1-2, 1996, Pages 153-159

  Pola, Josef ^a   Pokorná, Dana ^a   Bastl, Zdeněk ^b   Šubrt, Jan ^c  

^a INSTITUTE OF CHEMICAL PROCESS FUNDAMENTALS   (Czech Republic)

^b J HEYROVSKÝ INSTITUTE OF PHYSICAL CHEMISTRY   (Czech Republic)

^c INSTITUTE OF INORGANIC CHEMISTRY   (Czech Republic)

Author keywords

1,1,3,3 Tetramethyldisiloxane; Chemical vapour deposition; Laser induced decomposition; Si C H O films

Indexed keywords

CARBON DIOXIDE LASERS; CHEMICAL VAPOR DEPOSITION; FILMS; HYDROCARBONS; INFRARED RADIATION; IRRADIATION; LASER APPLICATIONS; SILANES;

DIMETHYLSILANE; INFRARED LASER INDUCED CHEMICAL VAPOUR DEPOSITION; INFRARED MULTIPHONON DECOMPOSITION; SILICON OXYCARBIDE FILM; TETRAMETHYLDISILOXANE; TRIMETHYLSILANE;

PYROLYSIS;

EID: 0030398458     PISSN: 01652370     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0165-2370(96)00955-2     Document Type: Article

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