Properties of heavily phosphorous-doped μc-Si deposited by mesh attached cathode-type r.f. glow discharge

Thin Solid Films

Volumn 274, Issue 1-2, 1996, Pages 113-119

  Jayatissa, Ahalapitiya Hewage ^a   Hatanaka, Yoshinori ^a   Nakanishi, Yoichiro ^a   Yamaguchi, Tomuo ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

Glow discharge; Phosphorous; Silicon; Structural properties

Indexed keywords

CRYSTALLINE MATERIALS; DEPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; GLOW DISCHARGES; GRAIN SIZE AND SHAPE; HALL EFFECT; OPTICAL VARIABLES MEASUREMENT; PHOSPHORUS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; X RAY DIFFRACTION ANALYSIS;

CATHODE TYPE RADIO FREQUENCY GLOW DISCHARGE; CRYSTALLINITY; DEPOSITION RATE; GRAIN BOUNDARY TRAPPING MODEL; MICROCRYSTALLINE SILICON FILMS; PHOSPHORUS DOPED MICROCRYSTALLINE SILICON;

THIN FILMS;

EID: 0030103886     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)07083-4     Document Type: Article

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