Experimental and analytical properties of 0.2 micron wide, multi-layer, gmr, memory elements

IEEE Transactions on Magnetics

Volumn 32, Issue 5 PART 2, 1996, Pages 4645-4647

  Pohm, A V ^a   Beech, R S ^a   Daughton, J M ^a   Everitt, B A ^a   Chen, E Y ^b   Durlam, M ^b   Nordquist, K ^b   Zhu, T ^b   Tehrani, S ^b  

^a NVE CORPORATION   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COERCIVE FORCE; MAGNETIC FIELDS; MAGNETIC VARIABLES MEASUREMENT; MAGNETIZATION; MAGNETORESISTANCE; MULTILAYERS;

FOUR POINT PROBE METHOD; GIANT MAGNETORESISTANCE; MAGNETORESISTIVE COEFFICIENT; MEMORY ELEMENTS; SHEET RESISTANCE;

MAGNETIC MATERIALS;

EID: 0030246052     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.539105     Document Type: Article

References (2)

1. H. Fujiwara, M. R. Parker, "Analytical Model of Giant MR in Multilayers with Biquadratic Coupling", Journ. Magnetism and Magnetic Materials, Vol. 135, pp. L23-L29, 1994
2. H. Y. Yoo, A. V. Pohm, J. H. Hur, S. W. Kenkare, C. S. Comstock, "Dynamic Switching Process of Sandwich Structured M-R Elements", IEEE Trans. Magn. Vol. 25 #5, pp. 4269-4271, 1989