Effect of radiation on breakdown of electrically pre-degraded oxides in MOS structures

Microelectronic Engineering

Volumn 28, Issue 1-4, 1995, Pages 349-352

  Brozek, Tomasz ^a   Wiśniewski, Robert ^a   Beck, Romuald B ^a   Jakubowski, Andrzej ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DEGRADATION; DIELECTRIC PROPERTIES OF SOLIDS; OXIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT; WEAR OF MATERIALS;

DIELECTRIC STRENGTH; IONIZING RADIATION;

MOS DEVICES;

EID: 0029326552     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00074-I     Document Type: Article

References (6)

1. Radiation hardness of silicon dioxide dielectric strength in silicon MOS structures