The viability of conventional high NA KrF imaging for sub-0.25 u lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 2726, Issue , 1996, Pages 46-53

  Farrell, T ^a   Nunes, R ^a   Campbell, R ^a   Hoh, P ^a   Samuels, D ^a   Kirk, J ^a   Conley, W ^a   Iba, J ^a   Shibata, T ^a  

^a IBM   (United States)

Author keywords

0.6NA KrF lithography; 200 nm lithography; Depth of focus; Excimer laser; Step and scan

Indexed keywords

COMPUTER SIMULATION; ELECTRONICS INDUSTRY; EXCIMER LASERS; IMAGING TECHNIQUES; MASKS; PHASE SHIFT; SCANNING;

PHASE SHIFT MASKS;

PHOTOLITHOGRAPHY;

EID: 0030313030     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.240943     Document Type: Conference Paper

References (4)

1. Deep UV negative resist characterization by exposure defocus tree methodology
2. Scattered light in photolithographic lenses
3. Astigmatism and field curvature from pin-bars
4. Electrical characterization of across-field lithographic performance for 256 M bit DRAM technologies