Synchrotron white beam topographic investigation of crystalline defects in silicon on insulator materials

Journal of Crystal Growth

Volumn 166, Issue 1-4, 1996, Pages 329-333

  Prieur, E ^a   Hartwig J ^a   Garcia, A ^b   Ohler, M ^a   Baruchel, J ^a   Aspar, B ^b   Rolland, G ^b  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; LATTICE CONSTANTS; MOIRE FRINGES; NONDESTRUCTIVE EXAMINATION; SILICON; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; X RAY CRYSTALLOGRAPHY;

BURGERS VECTORS; SEPARATION BY IMPLANTATION OF OXYGENS (SIMOX); SYNCHROTRON WHITE BEAM X RAY DIFFRACTION TOPOGRAPHY (WBT); TRANSMISSION GEOMETRY;

DISLOCATIONS (CRYSTALS);

EID: 0030230366     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00114-5     Document Type: Article

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