Gigabit-per-second cryogenic optical link using optimized low-temperature AlGaAs-GaAs vertical-cavity surface-emitting lasers

IEEE Journal of Quantum Electronics

Volumn 32, Issue 8, 1996, Pages 1347-1359

  Lu, Bo ^a,b,c   Lu, Yin Chen ^b,d   Cheng, Julian ^a,b   Schneider, Richard P ^a,e,f   Zolper, John C ^a,e   Goncher, Gary ^a,g  

^a IEEE

^b UNIVERSITY OF NEW MEXICO   (United States)

^c SDL INC   (United States)

^d ArrayComm   (United States)

^e SANDIA NATIONAL LABORATORIES   (United States)

^f HEWLETT PACKARD LABORATORIES   (United States)

^g TEKTRONIX INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; BIT ERROR RATE; CRYOGENICS; LOW TEMPERATURE OPERATIONS; OPTICAL INTERCONNECTS; OPTICAL LINKS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CRYOGENIC ELECTRONIC SYSTEMS; CRYOGENIC OPTICAL LINKS; LASER BIAS CURRENT COMPENSATION; THRESHOLD VOLTAGE; VERTICAL CAVITY SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030213845     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.511547     Document Type: Article

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