200 mm SiGe-HBT technology for wireless and mixed-signal applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1994, Pages 437-440

  Harame, D L ^a   Schonenberg, K ^a   Gilbert, M ^a   Nguyen Ngoc, D ^a   Malinowski, J ^a   Jeng, S J ^a   Meyerson, B ^a   Cressler, J D ^a   Groves, R ^a   Berg, G ^a   Tallman, K ^a   Stein, K ^a   Hueckel, G ^a   Kermarrec, C ^a   Tice, T ^a  

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIGITAL TO ANALOG CONVERSION; EPITAXIAL GROWTH; FILM GROWTH; PERFORMANCE; RADIO COMMUNICATION; RELIABILITY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

SILICON GERMANIUM;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 18544395232     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)