Phase space multiple refresh: A versatile statistical enhancement method for Monte Carlo device simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 65-66

  Jungemann, C ^a   Decker, S ^b   Thoma, R ^c   Eng, W L ^d   Goto, H ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

^b UNIVERSITY OF BREMEN   (Germany)

^c MOTOROLA INC   (United States)

^d RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

IMPACT IONIZATION; MOSFET DEVICES; PHASE SPACE METHODS; STOCHASTIC SYSTEMS;

DEVICE SIMULATIONS; ENERGETIC PARTICLES; MC SIMULATION; MONTE CARLO DEVICE SIMULATIONS; NMOSFET; STOCHASTIC NOISE;

MONTE CARLO METHODS;

EID: 33749934297     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865276     Document Type: Conference Paper

References (8)

1. R. Thoma et al., J. Appl. Phys. 69, p. 2300, 1991.
2. S. E. Laux et al., IBM J. RES. DEVELOP. 34, p. 466, 1990
3. K. Shigeta et al., in Simulation of Semiconductor Devices and Processes 6, Springer-Verlag, Wien, p. 384, 1995.
4. Chr. Jungemann, thesis, RWTH Aachen, 1995.
5. H.-J. Peifer, thesis, RWTH Aachen, 1992.
6. Chr. Jungemann et al., in Simulation of Semiconductor Devices and Processes 6, Springer-Verlag, Wien, 1995.
7. I. Bork et al., NUPAD Tech. Dig. 5, p. 63, 1994.
8. Chr. Jungemann et al., ICVC Tech. Dig. 4, p. 211, 1995.