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Physical Review Letters

Volumn 74, Issue 26, 1995, Pages 5260-5263

Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin-valve transistor

(4) Monsma, D J a Lodder, J C a Popma, Th J A a Dieny, B b

a UNIVERSITY OF TWENTE (Netherlands)

b CEA GRENOBLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000947277 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.74.5260 Document Type: Article

Times cited : (385)

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- In this example, for simplicity, the interfacial and bulk scattering has been averaged in Eqs. 4 and 5, and spin-independent scattering has been neglected in 5. In the picture of the resistance network for CPP-MR, configuration RP is proportional to 1/λ↑+1/λ↑ in parallel with 1/λ↓+1/λ↓ leading to RP∝2/(λ↑+λ↓), while RAP is proportional to 1/λ↑+1/λ↓ in parallel with 1/λ↓+1/λ↑ so that RAP∝(λ↑+λ↓)/(2λ↑λ↓).

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