Electrical properties of Nichia AlGaN/InGaN/GaN blue LEDs in a wide current/temperature range

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 937-942

  Zeller, Joachim ^a   Eliseev, Petr G ^a   Sartori, Philippe ^a   Perlin, Piotr ^a   Osinski, Marek ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; DEGRADATION; ELECTRIC PROPERTIES; ELECTROMIGRATION; HETEROJUNCTIONS; LIGHT EMISSION; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

BLUE LIGHT EMITTING DIODES; ELECTRICAL STRESS; HIGH DENSITY CURRENT STRESS; SHUNT FORMATION; WIDE CURRENT RANGE; WIDE TEMPERATURE RANGE;

LIGHT EMITTING DIODES;

EID: 0029747795     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)