C-MOS self-aligned low temperature poly-Si TFTs fabricated by laser annealing of poly-Si films

Conference on Solid State Devices and Materials

Volumn , Issue , 1991, Pages 638-640

  Hashizume, Tsutomu ^a   Inoue, Satoshi ^a   Inami, Takashi ^a   Nakazawa, Takashi ^a   Yudasaka, Ichio ^a   Ohshima, Hiroyuki ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE--LASER APPLICATIONS; SEMICONDUCTOR DEVICES, MOS;

C-MOS TFT; LASER ANNEALING; LPCVD; POLYSILICON; SILICON TFT;

TRANSISTORS, FIELD EFFECT;

EID: 0025749747     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.7567/ssdm.1991.pc5-13     Document Type: Conference Paper

References (5)