Plasma etching process development using in situ optical emission and ellipsometry

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 5, 1996, Pages 3283-3290

  Lee, J T C ^a   Blayo, N ^a,b   Tepermeister, I ^a,c   Klemens, F P ^a   Mansfield, W M ^a   Ibbotson, D E ^a,d  

^a LUCENT TECHNOLOGIES   (United States)

^b ISA Jobin Yvon   (France)

^c LES Incorporated   (United States)

^d NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; ELLIPSOMETRY; EMISSION SPECTROSCOPY; GATES (TRANSISTOR); HELICONS; PLASMA SOURCES; REFLECTOMETERS; SCANNING ELECTRON MICROSCOPY; SILICON; THICKNESS MEASUREMENT; TITANIUM NITRIDE;

ETCH SELECTIVITY; FILM THICKNESS; GATE OXIDE; POLYSILICON; PROFILE CONTROL; RADIOFREQUENCY BIAS;

PLASMA ETCHING;

EID: 0030233824     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588821     Document Type: Article

References (12)

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