Optically Achieved p-i-n Diode Switch Utilizing a Two-Dimensional Laser Array at 808 nm as an Optical Source

IEEE Transactions on Electron Devices

Volumn 36, Issue 2, 1989, Pages 367-374

  Herczfeld, Peter R ^c   Bahasadri, Ali ^c   Bechtle, Daniel W ^a   Janton, Walter ^a   Gombar, Anna M ^a  

^a SARNOFF CORPORATION   (United States)

^b GE Astro Space Division   (United States)

^c DREXEL UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC SWITCHES, SEMICONDUCTOR; LASERS, SEMICONDUCTOR; SEMICONDUCTOR DIODES, PHOTODIODE;

LIGHT-TRIGGERED SWITCHES; OPTICALLY ACTIVATED KILOVOLT/KILOAMPERE SWITCH; OPTICALLY CONTROLLED P-I-N DIODE SWITCH;

OPTOELECTRONIC DEVICES;

EID: 0024610566     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.19938     Document Type: Article

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