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Volumn 60, Issue 5, 1995, Pages 523-524
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Note on the interpretation of injection-level-dependent surface recombination velocities
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Author keywords
73.40
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Indexed keywords
EXCESS MINORITY CARRIER CONCENTRATION;
SEMICONDUCTOR SURFACE;
SHOCKLEY READ HALL RECOMBINATION STATISTICS;
SURFACE MINORITY CARRIER CONCENTRATION;
SURFACE RECOMBINATION VELOCITY;
ALGORITHMS;
ELECTRONS;
FERMI LEVEL;
INTEGRAL EQUATIONS;
MODULATION;
QUANTUM EFFICIENCY;
SILICON;
SURFACES;
VELOCITY MEASUREMENT;
SOLID STATE PHYSICS;
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EID: 0029307331
PISSN: 09478396
EISSN: 14320630
Source Type: Journal
DOI: 10.1007/BF01538780 Document Type: Article |
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Times cited : (43)
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References (7)
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