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Applied Physics Letters

Volumn , Issue , 1995, Pages 1261-

Internal quantum efficiency of thin epitaxial silicon solar cells

(5) Brendel, Rolf a Hirsch, Michèle a Stemmer, Michael a Rau, Uwe a Werner, Jürgen H a

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CALCULATIONS; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CURRENT DENSITY; DIFFERENTIAL EQUATIONS; DIFFUSION; EPITAXIAL GROWTH; MATHEMATICAL MODELS; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; SHORT CIRCUIT CURRENTS; OPEN CIRCUIT VOLTAGE; SILICON SOLAR CELLS; SUBSTRATES;

CARRIER GENERATION; CARRIER INJECTION; OPEN CIRCUIT VOLTAGE; SATURATION CURRENT; SURFACE RECOMBINATION;

SOLAR CELLS; QUANTUM EFFICIENCY;

ACTIVE LAYER; CARRIER GENERATION; CARRIER INJECTION; DOPED SUBSTRATES; INTERNAL QUANTUM EFFICIENCY; MONOCRYSTALLINE SUBSTRATES; SILICON CELLS; THEORETICAL EXPRESSION;

EID: 0029637544 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.113256 Document Type: Article

Times cited : (14)

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