ZnCdSe-MgZnSSe laser diodes fabricated by gas-source molecular beam epitaxy

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 1167-

  Imaizumi, M ^a   Endoh, Y ^a   Suita, M ^a   Ohtsuka, K ^a   Isu, T ^a   Namizaki, H ^a   Nunoshita, M ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PYROLYSIS; SEMICONDUCTING FILMS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

GAS SOURCE MOLECULAR BEAM EPITAXY; HYDRIDE GAS SOURCE; X RAY ROCKING CURVE;

SEMICONDUCTOR GROWTH;

EID: 0030562535     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00885-3     Document Type: Article

References (2)

1. M. Imaizumi Y. Endoh M. Suita K. Ohtsuka T. Isu M. Nunoshita Jpn. J. Appl. Phys. 33 1994 L13
2. M. Imaizumi Y. Endoh M. Suita K. Ohtsuka T. Isu J. Crystal Growth 136 1994 366