Investigation of on-chip high temperature annealing of PMOS dosimeters

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 997-1001

  Kelleher, Ann ^a   Lane, William ^a   Adams, Leonard ^a  

^a EUROPEAN SPACE AGENCY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOSIMETRY; HIGH TEMPERATURE EFFECTS; MOSFET DEVICES; RADIATION EFFECTS;

RADIATION SENSITIVITY; THRESHOLD VOLTAGE;

DOSIMETERS;

EID: 0030173122     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510746     Document Type: Article

References (6)

1. A.C. Holmes-Siedle, "The Space Charge Dosimeter General Principles of a New method of Radiation Dosimetry", Nucl. Instrum. Methods, Vol 121, pp. 169-179, 1974.
2. A. Kelleher, N. McDonnell, B. O'Neill, W. Lane, "Investigation into the re-use of PMOS Dosimeters", IEEE Trans, on Nucl. Sci. , Vol 41, No 3, pp. 445-451, 1994.
3. A. Grove, Physics and Technology of Semiconductor Devices, Me Graw Hill, 1967, pp. 237-238.
4. S. Sze, Physics of Semiconductor Devices, John Wiley & Sons, 1987, pp587-588.
5. Artic Environmental Ltd, CT6000 Thermal Test User Manual.
6. A. Kelleher, N. McDonnell, B. O'Neill, W. Lane, "Investigation of Long Term Fading in PMOS Dosimeters", 2nd ESA Electronic Components Conference, EECC'93, ESTEC, Noordwijk, The Netherlands, pp 307-312, May 1993.