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Volumn , Issue , 1982, Pages 811-812
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PROPERTIES OF THIN OXYNITRIDE FILMS USED AS FLOATING-GATE TUNNELING DIELECTRICS.
[No Author Info available]
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Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRON TRAPPING;
FLOATING-GATE EEPROM CELLS;
FLOATING-GATE TUNNELING DIELECTRICS;
P/E WINDOW WIDENING;
THIN OXYNITRIDE FILMS;
TRAP GENERATION;
DATA STORAGE, SEMICONDUCTOR;
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EID: 0020309886
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (11)
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References (0)
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