Monolithic Integration of InGaAsP/InP Distributed Feedback Laser and Electroabsorption Modulator by Vapor Phase Epitaxy

Journal of Lightwave Technology

Volumn 5, Issue 9, 1987, Pages 1277-1285

  Suzuki, Masatoshi ^a   Noda, Yukio ^a   Tanaka, Hideaki ^a   Akiba, Shigeyuki ^a   Kushiro, Yukitoshi ^a   Isshiki, Hideo ^b  

^a KDDI R AND D LABORATORIES INC   (Japan)

^b UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC; MODULATORS; SEMICONDUCTING INDIUM COMPOUNDS - GROWTH; SEMICONDUCTOR DEVICES - HETEROJUNCTIONS; WAVEGUIDES, OPTICAL;

DISTRIBUTED FEEDBACK LASER; ELECTROABSORPTION MODULATOR; LINEWIDTH-ENHANCEMENT FACTOR; MODULATOR WAVEGUIDE; THREE-STEP VAPOR PHASE EPITAXY (VPE);

LASERS, SEMICONDUCTOR;

EID: 0023415844     PISSN: 07338724     EISSN: 15582213     Source Type: Journal    
DOI: 10.1109/JLT.1987.1075650     Document Type: Article

References (27)

1. F. Koyama and Y. Suematsu, “Dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers,” IEEE J. Quantum Electron., vol. QE-21, 4, pp. 292–297, 1985.
2. R. C. Alferness, “Waveguide electrooptic modulators,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, pp. 1121–1137, 1982.
3. A. H. Gnauck, S. K. Korotky, J. C. Campbell, J. R. Talman, J. J. Veselka, and A. R. McCormick, “Information-bandwidth-limited transmission at 8 Gbit/s over 68.3 km of optical fiber,” in Proc. OFC'86 (Atlanta, GA) 1986. pp. 39–42.
4. T. H. Wood, C. A. Burrus, D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, and W. Wiesmann, “131-ps optical modulation in semiconductor multiple quantum wells (MQW's),” IEEE J. Quantum Electron., vol. QE-21, no. 2, pp. 117–118, 1985.
5. P. S. Cross and R. V. Schmidt, “1-Gbit/s integrated optical modulator,” IEEE J. Quantum Electron., vol. QE-15, no. 12, pp. 1415–1418, 1979.
6. Y. Noda, M. Suzuki, Y. Kushiro, and S. Akiba, “High-speed electroabsorption modulator with strip-loaded GaInAsP planar waveguide,” J. Lightwave Technol., vol. LT-14, pp. 1445–1453, 1986.
7. F. K. Reinhart, “Electroabsorption in AlyGa1-yAs-AlxGa1-x As double heterostructure,” Appl. Phys. Lett., vol. 22, pp. 372–374, 1973.
8. G. E. Stillman, C. M. Wolfe, C. O. Bozler, and J. A. Rossi, “Electroabsorption in GaAs and its application to waveguide detectors and modulators,” Appl. Phys. Lett., vol. 28, pp. 544–546, 1976.
9. N. K. Dutta and N. A. Olsson, “Electroabsorption in InGaAsP-InP double heterostructures,” Electron. Lett., vol. 20, pp. 634–635, 1984.
10. Y. Noda, M. Suzuki, Y. Kushiro, and S. Akiba. “1.6-GHz electroabsorption light modulation in InGaAsP/InP double-heterostructures,” Electron. Lett., vol. 21, pp. 1182–1183, 1985.
11. J. C. Campbell, J. C. DeWinter, M. A. Pollack, and R. E. Nahory, “Buried heterojunction electroabsorption modulators,” Appl. Phys. Lett., vol. 32, pp. 471–473, 1978.
12. M. Suzuki, Y. Noda, Y. Kushiro, and S. Akiba, “Dynamic spectral width of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation,” Electron, Lett., vol. 22, pp, 312–313. 1986.
13. M. Suzuki, Y. Noda, and Y. Kushiro, “Characterization of dynamic spectral width of an InGaAsP/InP electroabsorption light modulator,” Trans. IECE Japan, vol. E69, pp. 395-398, 1986.
14. Y. Kawamura, K. Wakita, Y. Yoshikuni, Y. Itaya, and H. Asahi, “Monolithic integration of InGaAsP/InP DFB lasers and In-GaAs/InAlAs MQW optical modulators,” Electron, Lett., vol. 22, pp. 242–243, 1986.
15. F. Koyama and K. Iga, “Frequency chirping of external modulator and its reduction,” Electron. Lett., vol. 21, pp. 1065–1066, 1986.
16. C. H. Henry, ‘Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-18, pp. 259–264, 1982.
17. J, Callaway, “Optical absorption in an electric field,” Phys. Rev., vol. 134, pp. A998-A1000, 1964.
18. B. O. Seraphin and N. Bottka, “Franz-Keldysh effect of the refractive index in semiconductors,” Phys. Rev., vol. 139, pp. A.560-565, 1965.
19. T. Tanbun-ek, S. Suzuki, W. S. Min, Y. Suematsu, F. Koyama, and S. Arai, “Static characteristics of 1,5-1.6 μm GaInAsP/InP buried heterostructure butt-jointed built-in integrated lasers,” IEEE J. Quantum Electron., vol. QE-20, pp, 131–140, 1984.
20. Y. Kushiro, Y. Noda, Y. Matsushima, and S. Akiba, “Hydride VPE growth for high-sensitive InGaAs/InGaAsP/InP heterostructure APD's and 1.4-1.5 μm InGaASP/InP MQW LD's,” in Proc. 11th Symp, GaAs and Related Compounds (Biarritz), 1984, pp. 157–162.
21. H. Nagai, Y. Noguchi, T. Matsuoka, and Y, Suzuki, “Prevention of surface corrugation thermal deformation for InGaAsP/InP DFB lasers,” Japan. J. Appl. Phys., vol. 22, pp, L291-L293, 1983.
22. T. Nishibe, M. Funamizu, H. Okuda, H. Furuyama, Y. Hirayama, M. Nakamura, and M. Iwamoto, “Entirely VPE-grown 1.5μm DFB lasers with low threshold currents,” in Proc. 11th IEEE LD Conf. (Kanazawa, Japan), pp, 98–99, 1986.
23. M. Suzuki and Y. Noda, “Monolithic integration of InGaAsP/InP distributed feedback laser and electroabsorption modulator by vapor-phase-epitaxy,” presented at OFC/IOOC ‘87 (Reno, NV), 1987, pap, ThF4.
24. Z. L. Liau, J. N. Walpole, and D. Z. Tsang, “Fabrication, characterization, and analysis of mass-transported GaInAsP/InP buried-heterostructure lasers,” IEEE J. Quantum Electron., vol. QE-20, pp. 855–865, 1984.
25. Y. Matsushima, Y. Noda, Y. Kushiro, N. Seki, and S. Akiba, “High sensitivity of VPE-grown InGaAs/InP heterostructure APD with buffer layer and guardring structure,” Electron. Lett., vol. 20, pp. 235–236, 1984.
26. C. Harder, K. Vehara, and A. Yariv, “Measurement of the linewidth enhancement factor α of semiconductor lasers,” Appl. Phys. Lett., vol. 42, pp. 328–330, 1983.
27. M. Osinski, D. F. G. Gallagher, and I. H. White, “Measurement of linewidth broadening factor in gain-switched InGaAsP injection lasers by CHP method,” Electron. Lett., vol. 21, pp, 981–982, 1985.