Novel high-isolation fet switches

IEEE Transactions on Microwave Theory and Techniques

Volumn 44, Issue 5, 1996, Pages 685-691

  Imai, Nobuaki ^a   Minakawa, Akira ^b   Okazaki, Hiroshi ^b  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; FREQUENCY RESPONSE; INTEGRATED CIRCUIT LAYOUT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

BAND REJECTION FILTER; HIGH ISOLATION CHARACTERISTICS; INSERTION LOSS DEGRADATION;

SEMICONDUCTOR SWITCHES;

EID: 0030145618     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.493921     Document Type: Article

References (15)

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