SPDT switch MMIC using E/D-mode GaAs JFETs for personal communications

GaAs IC Symposium Technical Digest 1992

Volumn , Issue , 1992, Pages 135-138

  Kusunoki, S ^a   Ohgihara, T ^a   Wada, M ^a   Murakami, Y ^a  

^a SONY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ARSENIDE; JUNCTION GATE FIELD EFFECT TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR SWITCHES;

BATTERY OPERATION; DEPLETION MODES; DUPLEXERS; ENHANCEMENT MODES; HIGH ISOLATION; PORTABLE HANDSETS; SPDT SWITCHES; TIME DIVISION;

III-V SEMICONDUCTORS;

EID: 85027156655     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/GAAS.1992.247206     Document Type: Conference Paper

References (4)

1. Y. Ayashi, "Microwave Switching with GaAs FETs," Microwave Journal, pp. 61-74, November 1982
2. M. J. Schindler and A. Morris, "DC-40 GHz and 20-40 GHz MMIC SPDT Switch," IEEE Trans. on Microwave Theory and Technique, vol. MTT-35, No. 12, pp. 1486-1493, 1987
3. M. Wada, H. Kawasaki, Y. Hida, A. Okubora and J. Kasahara, "12 GHz GaAs J-FET 256/258 Dual-modulus Prescaler IC," GaAs IC Symp. Digest, pp. 109-112, 1989
4. Guillermo Gonzalez, Microwave Transistor Amplifiers Analysis and Design, Section 4.7, Prentice-Hall, Inc., Englewood Cliffs, New Jersey 07632, 1984