Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 67, Issue , 1995, Pages 1653-

  Chen, G D ^a,b   Smith, M ^a   Lin, J Y ^a   Jiang, H X ^a   Khan, M Asif ^c   Sun, C J ^c  

^a KANSAS STATE UNIVERSITY   (United States)

^b XI'AN JIAOTONG UNIVERSITY   (China)

^c APA Optronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DYNAMICS; EMISSION SPECTROSCOPY; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; THERMAL EFFECTS;

EMISSION INTENSITY; EXCITON RECOMBINATION DYNAMICS; GALLIUM NITRIDE; LINESHAPES; LINEWIDTHS; RADIATIVE RECOMBINATION LIFETIME;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029377974     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115046     Document Type: Article

References (0)