High-Performance TFT’s Fabricated by XeCl Excimer Laser Annealing of Hydrogenated Amorphous-Silicon Film

IEEE Transactions on Electron Devices

Volumn 36, Issue 12, 1989, Pages 2868-2872

  Sera, Kenji ^a   Okumura, Fujio ^a   Uchida, Hiroyuki ^a   Itoh, Shinji ^a   Kaneko, Setsuo ^a   Hotta, Kazuaki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; LASERS, EXCIMER; SEMICONDUCTING SILICON--THIN FILMS;

MATRIX ELEMENTS; THIN FILM TRANSISTORS;

TRANSISTORS, FIELD EFFECT;

EID: 0024908311     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.40970     Document Type: Article

References (8)

1. S. Morozumi, K. Ogichi, T. Misawa, R. Araki, and H. Oshima, “B/ W and color video displays addressed by poly-Si TFT’s,” in SID'83 Dig., 1983, p. 156.
2. A. Mimura et al., ‘High performance low-temperature poly-Si TFT’s for LCD,’ IEDM Tech. Dig., p, 436; 1987.
3. T. Sameshima, M. Sekiya, and S. Usui, “XeC1 excimer laser annealing used in the fabrication of poly-Si TFT’s,” Late News Abst. ICSSDM, 17th C-3-8LN, 1985, pp. 12–13.
4. S. ltoh, M. Arai, and K. Hotta, “200-ns long laser pulses from a simple UVpreionized XeC1 excimer laser using a new charge-transfer circuit,” in CLEO’87 Tech. Dig., 1987, p. 326.
5. T. Sameshima, S. Usui, and H. Tomita, “Fabrication of heavily doped polycrystalline silicon film using laser doping technique,” Japan. J. Appl. Phys., vol. 26, no. 10, pp. L1678-L1680, Oct. 1987.
6. J. G. Fossum, A. Ortiz-Conde, H. Shichijo, and S. K. Banerje, “Anomalous leakage current in LPCVD polysilicon MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-32, no. 9, pp. 1878–1884, Sept. 1985.
7. S. K. Madan and D. A. Antoniadis, “Leakage current mechanisms in hydrogenated-passivated fine-grain polycrystalline silicon on insulator MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-33, no. 10, pp. 1518–1528, Oct. 1986.
8. S. Seki, O. Kogure, and B. Tsujiyama, “Laser-recrystallized polycrystalline film thin film transistors with low leakage current and high switching ratio,” IEEE Electron Device Lett., vol. EDL-8, no. 9, pp. 434–436, Sept. 1987.