Improvement of etching selectivity to photoresist for AI dry etching by using ion implantation

IEICE Transactions on Electronics

Volumn E79-C, Issue 3, 1996, Pages 382-384

  Ueda, Keiichi ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

Photoresist, ion implantation, dry etching, resist selectivity

Indexed keywords

ALUMINUM ALLOYS; CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; DRY ETCHING; ION IMPLANTATION; LITHOGRAPHY; LSI CIRCUITS; PHOTORESISTS; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SPUTTERING;

ETCHING RATE; PHOTORESIST PATTERNING; RESIST PATTERNS; RESIST SELECTIVITY;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0030109493     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (5)

1. P.M. Schable, W. C. Metzger, and J. P. Anderson, "Reactive ion etching of aluminum and aluminum alloys in an rf plasma containing halogen species," J. Vac. Sei. Technol., vol. 15, no. 2, pp. 334-337, Mar./Apr. 1981.
2. W. E. Frank, "Metal etch with Hi-addition to conventional chemistry," Digest of 1995 Symp. on VLSI Technol., pp. 91-92, June 1995.
3. H. Aoki, T. Hashimoto, E. Ikawa, and T. Kikkawa, "0.2 fim low-temperature Al etching using SiO2 mask," Digest of the 5th Int. Microprocess Conf., pp. 144-145, 1992.
4. T. Shibano, H. Itakura, M. Yoneda, and H. Abe, "Anisotropie etching of AlSi films," Proceedings of symp. on dry process, pp. 14-19, 1983.
5. M. Yoshikawa, G. Katagiri, and H. Ishida, "Raman spectra of diamondlike amorphous carbon films," J. Appl. Phys., vol. 64, no. 11, pp. 6464-6468, Dec. 1988.