Analysis of Si-Ge source structure in 0.15 μm SOI MOSFETs using two-dimensional device simulation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 992-995

  Arisumi, Osamu ^a   Matsuzawa, Kazuya ^a   Shigyo, Naoyuki ^a   Terauchi, Mamoru ^a   Nishiyama, Akira ^a   Yoshimi, Makoto ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

2 D device simulation; Bandgap narrowing; Drain breakdown voltage; Floating body effect; Fully depleted SOI MOSFET; Hole current; Impact ionization; Si Ge

Indexed keywords

COMPUTER SIMULATION; CRYSTAL IMPURITIES; ENERGY GAP; IONIZATION OF SOLIDS; PERMITTIVITY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

BANDGAP ENGINEERING TECHNIQUE; BANDGAP NARROWING; DRAIN BREAKDOWN VOLTAGE; FLOATING BODY EFFECT; SILICON GERMANIUM SOURCE STRUCTURE; TWO DIMENSIONAL DEVICE SIMULATION;

MOSFET DEVICES;

EID: 0030078883     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.992     Document Type: Article

References (13)

1. J. P. Colinge: Tech. Dig. Int. Electron Device Meet. (IEEE, Washington, D. C., 1989) 817.
2. M. Yoshimi, H. Hazama, M. Takahashi, S. Kambayashi, T. Wada, K. Kato and H. Tango: IEEE Electron Devices 36 (1989) 493.
3. Y. Yamaguchi: IEEE Electron Devices 40 (1993) 179.
4. T. Sekigawa and T. Hayashi: Solid-State Electron. 27 (1984) 827.
5. M. Yoshimi, M. Takahashi, T. Wada, K. Kato, S. Kambayashi, M. Kemmochi and K. Natori: IEEE Electron Devices 37 (1990) 2015.
6. K. Kato, T. Wada and K. Taniguchi: IEEE Electron Devices 32 (1985) 458.
7. L. T. Su, Hang Hu, Jarvis B. Jacobs, Melanie J. Sherony, Andy Wei and Dimitri A. Antoniadis: Tech. Dig. Int. Electron Device Meet. (IEEE, San Francisco, 1994) p. 649.
8. M. Yoshimi, M. Terauchi, A. Murakoshi, M. Takahashi, K. Matsuzawa, N. Shigyo and Y. Ushiku: Tech. Dig. Int. Electron Device Meet. (IEEE, San Francisco, 1994) p. 429.
9. M. Terauchi, M. Yoshimi, A. Murakoshi and Y. Ushiku: Tech. Dig. Symp. VLSI Technology, Kyoto, 1995, p. 35.
10. T. Wada and R. Dang: Proc. NASECODE IV, 1985, p. 102.
11. A. Nishiyama, O. Arisumi, M. Terauchi, S. Takeno, K. Suzuki, C. Takakura and M. Yoshimi: to be published in Jpn. J. Appl. Phys.
12. R. Van Overstraeten: Solid-State Electron. 13 (1970) 583.
13. F. Capasso: Semiconductors and Semimetals (Academic Press, New York, 1985) Vol. 22, Pt. D, p. 80.