Characterization of Thin Silicon Oxynitride Films Prepared by Low Pressure Rapid Thermal Chemical Vapor Deposition

Journal of the Electrochemical Society

Volumn 140, Issue 10, 1993, Pages 2970-2974

  Harris, G S ^a   McLarty, P K ^a   Brush, H ^a   Misra, V ^a   Wortman, J J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; REACTION KINETICS; SEMICONDUCTING SILICON COMPOUNDS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SILICON OXYNITRIDE;

THIN FILMS;

EID: 0027677723     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2220941     Document Type: Article

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