Ultrafast Operation of Vth-Adjusted P+ -n+ Double-Gate SOI MOSFET's

IEEE Electron Device Letters

Volumn 15, Issue 10, 1994, Pages 386-388

  Tanaka, Tetsu ^a   Suzuki, Kunihiro ^a   Horie, Hiroshi ^a   Sugii, Toshihiro ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; ELECTRODES; GATES (TRANSISTOR); OPTIMIZATION; OSCILLATORS (ELECTRONIC); SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY;

SHORT CHANNEL EFFECTS; ULTRAFAST OPERATION;

MOSFET DEVICES;

EID: 0028532218     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.320976     Document Type: Article

References (10)

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