Two-dimensional simulation of band-to-band tunneling in an LDD-MOSFET: Explanation of experimental results and prediction of new phenomena

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1990, Pages 67-68

  Orlowski, M ^a   Sun, S W ^b   Blakey, P ^a   Subrahmanyan, R ^a  

^a MOTOROLA INC   (United States)

^b Microprocessor Device Group ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; CHANNEL REGION; COMBINED EFFECT; DEEP SUB-MICRON; DEVICE SIMULATORS; HIGH DRAIN VOLTAGE; LIGHTLY-DOPED DRAINS; MOS-FET; MOSFETS; OXIDE THICKNESS; SUBTHRESHOLD; TRANSISTOR DEGRADATION; TWO-DIMENSION; TWO-DIMENSIONAL SIMULATIONS;

IMPACT IONIZATION; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICES--TUNNELING;

MOSFET DEVICES; SEMICONDUCTOR DEVICES, MOSFET;

DEEP-SUBMICRON MOSFET; DIGEST OF PAPER; MINIMOS DEVICE SIMULATORS;

EID: 0025664089     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.1990.111011     Document Type: Conference Paper

References (8)

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