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Volumn 19, Issue 6, 1983, Pages 947-952

The Effect of Intervalence Band Absorption on the Thermal Behavior of InGaAsP Lasers

Author keywords

[No Author keywords available]

Indexed keywords

LASERS, SEMICONDUCTOR;

EID: 0020766258     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1983.1071954     Document Type: Article
Times cited : (116)

References (20)
  • 1
    • 0017936236 scopus 로고
    • In 1-xGaxAs yP1-y/nP DH laser fabricated on InP (l00) substrates
    • T. Yamamoto, K. Sakai, S. Akiba, and Y. Suematsu, “In 1-xGaxAs yP1-y/nP DH laser fabricated on InP (l00) substrates,” IEEE J. Quantum Electron., vol. QE-14, pp. 95-98, 1978.
    • (1978) IEEE J. Quantum Electron , vol.QE-14 , pp. 95-98
    • Yamamoto, T.1    Sakai, K.2    Akiba, S.3    Suematsu, Y.4
  • 2
    • 0018454995 scopus 로고
    • Temperature sensitive threshold current of InGaAsP-InP double heterostructure lasers
    • Y. Horikoshi and Y. Furukawa, “Temperature sensitive threshold current of InGaAsP-InP double heterostructure lasers,” Japan. J. Appl. Phys., vol. 18, pp. 809-815, 1979.
    • (1979) Japan. J. Appl. Phys , vol.18 , pp. 809-815
    • Horikoshi, Y.1    Furukawa, Y.2
  • 3
    • 0019315580 scopus 로고
    • Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (Galn) (AsP)/InP DH lasers
    • G.H.B. Thompson and G. D. Henshall, “Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (Galn) (AsP)/InP DH lasers, “ Electron. Lett., vol. 16, pp. 42-44, 1980.
    • (1982) IEEE J. Quantum Electron. , vol.QE-18 , pp. 352-363
    • Thompson, G.H.B.1    Henshall, G.D.2
  • 4
    • 0020100455 scopus 로고
    • Band-to-band Auger effect in long wavelength multinary HI-V alloy semiconductor lasers
    • A. Sugimura, “Band-to-band Auger effect in long wavelength multinary HI-V alloy semiconductor lasers, “ IEEE J. Quantum Electron., vol. QE-18, pp. 352-363, 1982.
    • (1982) IEEE J. Quantum Electron , vol.QE-18 , pp. 352-363
    • Sugimura, A.1
  • 5
    • 0019912480 scopus 로고
    • The case for the Auger effect
    • N. K. Dutta and R. J. Nelson, “The case for the Auger effect,” J Appl. Phys., vol. 53, pp. 74-92, 1982.
    • (1982) J Appl. Phys. , vol.53 , pp. 74-92
    • Dutta, N.K.1    Nelson, R.J.2
  • 6
    • 0019614280 scopus 로고
    • Analysis of electrical, threshold, and temperature characteristic of InGaAsP/InP double heterojunction lasers
    • M. Yano, H. Imai, and M. Takusagawa, “Analysis of electrical, threshold, and temperature characteristic of InGaAsP/InP double heterojunction lasers, “ IEEE J. Quantum Electron., vol. QE-17, pp. 1954-1963, 1981.
    • (1981) IEEE J. Quantum Electron. , vol.QE-17 , pp. 1954-1963
    • Yano, M.1    Imai, H.2    Takusagawa, M.3
  • 7
    • 84933258108 scopus 로고
    • The temperature dependence of the efficiency and threshold current of In 1-xGaxAs x P 1-y lasers related to intervalence band absorption
    • A. Adams, M. Asada, Y. Suematsu, and S. Arai, “The temperature dependence of the efficiency and threshold current of In 1-xGaxAs x P 1-y lasers related to intervalence band absorption, “ Japan. J. Appl. Phys., vol. 19, pp. 621-624, 1980.
    • (1980) Japan. J. Appl. Phys. , vol.19 , pp. 621-624
    • Adams, A.1    Asada, M.2    Suematsu, Y.3    Arai, S.4
  • 8
  • 9
    • 0019565715 scopus 로고
    • Thermal decomposition of InP and its influence on iso-epitaxy
    • H. Temkin, V. G. Keramidas, and S. Mahajan, “Thermal decomposition of InP and its influence on iso-epitaxy,” J. Electrochem. soc., vol. 128, pp. 1088-1091, 1981.
    • (1981) J. Electrochem. soc. , vol.128 , pp. 1088-1091
    • Temkin, H.1    Keramidas, V.G.2    Mahajan, S.3
  • 10
    • 0000054197 scopus 로고
    • The valence band structure of the III-V compounds
    • R. Braunstein and E. O. Kane, “The valence band structure of the III-V compounds,” J. Phys. Chem. Solids, vol. 23, pp. 1423-431, 1962.
    • (1962) J. Phys. Chem. Solids , vol.23 , pp. 1423-1431
    • Braunstein, R.1    Kane, E.O.2
  • 11
    • 30244514592 scopus 로고
    • Band structure of indium antimonide
    • E. O. Kane, “Band structure of indium antimonide,” J. Phys. Chem. Solids, vol. 1, pp. 249-261, 1957.
    • (1957) J. Phys. Chem. Solids , vol.1 , pp. 249-261
    • Kane, E.O.1
  • 12
    • 84939733843 scopus 로고
    • Electronic structure of Ga x In 1_ x AsP 1-y; alloys lattice-matched to InP
    • New York: Wiley
    • T. P. Pearsall, “Electronic structure of Ga x In 1_ x AsP 1-y; alloys lattice-matched to InP,” GalnAsP Alloy Semiconductors. New York: Wiley, 1983.
    • (1983) GalnAsP Alloy Semiconductors
    • Pearsall, T.P.1
  • 13
    • 0000436825 scopus 로고
    • k. p perturbation theory in III-V compounds and alloys: A reexamination
    • C. Herman and C. Weisbuch, “k. p perturbation theory in III-V compounds and alloys: A reexamination,” Phys. Rev. B, vol. 15, pp. 823-833, 1977.
    • (1977) Phys. Rev. B , vol.15 , pp. 823-833
    • Herman, C.1    Weisbuch, C.2
  • 14
    • 0010402496 scopus 로고
    • Interband magneto-absorption of In0.53Ga0.47As
    • K. Alavi, R.L. Aggarawal, and S. H. Groves, ”Interband magneto-absorption of In0.53Ga0.47As,” Phys. Rev. B, vol. 21, pp. 1311-1315, 1980.
    • (1980) Phys. Rev. B , vol.21 , pp. 1311-1315
    • Alavi, K.1    Aggarawal, R.L.2    Groves, S.H.3
  • 15
    • 0017955321 scopus 로고
    • Oscillatory magneto-transmission of In 1-xGaxAs 1-y alloys
    • K. Alavi, R.L. Aggarawal, and S. H. Groves, “Oscillatory magneto-transmission of In 1-xGaxAs 1-y alloys,” J. Magnetism Magnetic Mater., vol. 11, pp. 136-138, 1979.
    • (1979) J. Magnetism Magnetic Mater , vol.11 , pp. 136-138
    • Alavi, K.1    Aggarawal, R.L.2    Groves, S.H.3
  • 16
    • 0019024186 scopus 로고
    • Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers
    • C. H. Henry, R. A. Logan and F. R. Merritt, “Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers,” J. Appl. Phys., vol. 51, pp. 3042-3050, 1980.
    • (1980) J. Appl. Phys , vol.51 , pp. 3042-3050
    • Henry, C.H.1    Logan, R.A.2    Merritt, F.R.3
  • 17
    • 0019589303 scopus 로고
    • Measurements of spectrum bias dependence, and intensity of spontaneous emission in GaAs lasers
    • C. H. Henry, R. A. Logan, and K. A. Bertuess, “Measurements of spectrum bias dependence, and intensity of spontaneous emission in GaAs lasers,” J. Appl. Phys., vol. 52, pp. 4453-4456, 1981.
    • (1981) J. Appl. Phys , vol.52 , pp. 4453-4456
    • Henry, C.H.1    Logan, R.A.2    Bertuess, K.A.3
  • 18
    • 0020764109 scopus 로고    scopus 로고
    • absorption, spontaneous emission, and gain spectrum of 1.3 μm InGaAs quaternary lasers
    • this issue
    • C. H. Henry, R. A. Logan, H. Temkin, and F. R. Merritt, “absorption, spontaneous emission, and gain spectrum of 1.3 μm InGaAs quaternary lasers,” IEEE J. Quantum Electron., this issue, pp. 941-946.
    • IEEE J. Quantum Electron , pp. 941-946
    • Henry, C.H.1    Logan, R.A.2    Temkin, H.3    Merritt, F.R.4
  • 20
    • 0020763715 scopus 로고    scopus 로고
    • Minority carrier lifetime and lumine scence efficiency of 1.3 μm InGaAsP-InP double heterostructure lasers
    • this issue
    • C. H. Henry, B. F. Levine, R. A. Logan, and C. G. Bethea, “Minority carrier lifetime and lumine scence efficiency of 1.3 μm InGaAsP-InP double heterostructure lasers,” IEEE J. Quantum Electron., this issue, pp. 905-912.
    • IEEE J. Quantum Electron , pp. 905-912
    • Henry, C.H.1    Levine, B.F.2    Logan, R.A.3    Bethea, C.G.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.