Absorption, Emission, and Gain Spectra of 1.3 μm InGaAsP Quaternary Lasers

IEEE Journal of Quantum Electronics

Volumn 19, Issue 6, 1983, Pages 941-946

  Henry, Charles H ^a   Logan, Ralph A ^a   Temkin, H ^a   Merritt, F Ralph ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS, SEMICONDUCTOR;

EID: 0020764109     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1983.1071955     Document Type: Article

References (17)

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8. C. H. Henry, B. F. Levine, R. A. Logan, and C. G. Bethea, “Minority carrier lifetime and luminescence efficiency of 1.3 μm InGaAsP-InP double heterostructure layers,” IEEE J. Quantum Electron., this issue, pp. 905-912.
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