Minority Carrier Lifetime and Luminescence Efficiency of 1.3 μm InGaAsP-lnP Double Heterostructure Layers

IEEE Journal of Quantum Electronics

Volumn 19, Issue 6, 1983, Pages 905-912

  Henry, Charles H ^a   Levine, Barry F ^a   Logan, Ralph A ^a   Bethea, Clyde G ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENCE; SEMICONDUCTOR DIODES, LIGHT EMITTING;

LASERS, SEMICONDUCTOR;

EID: 0020763715     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1983.1071997     Document Type: Article

References (23)

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