High temperature processing of ferroelectric thin films using interconnect wafer technology

Integrated Ferroelectrics

Volumn 41, Issue 1-4, 2001, Pages 25-34

  Donohue, P P ^a   Todd, M A ^a   Anthony, C J ^a   Brown, A G ^a   Harper, M A C ^a   Watton, R ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

Composite detector; Ferroelectric thin films; High temperature processing; Interconnect wafer; Lead Scandium Tantalate; Rapid thermal annealing; Readout circuitry; Sputtering; Thermal detectors

Indexed keywords

HIGH-TEMPERATURE PROCESSING; INTERCONNECT WAFER; LEAD SCANDIUM TANTALATES; READOUT CIRCUITRY; THERMAL DETECTORS;

CHEMICAL DETECTION; DETECTORS; FERROELECTRIC THIN FILMS; MATERIALS PROPERTIES; RAPID THERMAL ANNEALING; SCANDIUM; SPUTTERING; THIN FILMS;

FERROELECTRIC MATERIALS;

EID: 0013412417     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580108012804     Document Type: Article

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