A simplified procedure for estimating the IC sensitivity to single-event upsets

Russian Microelectronics

Volumn 27, Issue 6, 1998, Pages 411-414

  Chumakov, A I ^a  

^a Sci Prod Corp Applic Specific E   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013320702     PISSN: 10637397     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Ionizing Radiation Effects in MOS Devices and Circuits, Ma, T.P. and Dressendorfer, P.V., New York: Wiley, 1989.
2. Nikiforov, A.Yu., Telets, V.A., and Chumakov, A.I., Radiatsionnye effekty v KMOP integral'nykh skhemakh (Radiation Effects in CMOS ICs), Moscow: Radio i svyaz', 1994.
3. Chumakov, A.I., Simulation of Single-Event Upsets in LSI, Mikroelektronika, 1988, vol. 17, no. 5, pp. 459-464.
4. Petersen, E., Single-Event Analysis and Prediction, Proc. 1997 IEEE Nuclear and Space Radiation Conf., Snowmass Village, 1997, p. III-1-III-160.
5. Koga, R., Single-Event Effects Ground Test Issues, IEEE Trans. Nucl. Sci., 1996, vol. 43, no. 2, pp. 661-670.
6. Calvel, P., Barillot, C., Lamothe, P. et al., An Empirical Model for Predicting Proton Induced Upsets, IEEE Trans. Nucl. Sci., 1996, vol. 43, no. 6, pp. 2827-2832.
7. Pickel, J.C., Single-Event Effects Rate Prediction, IEEE Trans. Nucl. Sci., 1996, vol. 43, no. 2, pp. 483-495.
8. Miroshkin, V.V. and Tverskoi, M.G., Prediction of Inversion Probability in Memory Devices Irradiated by Energetic Particle Beams, Preprint of St. Petersburg Inst. of Nuclear Physics, Gatchina, 1993, no. 1915.
9. Chumakov, A.I. and Kuznetsov, N.V., Simplified Threshold Estimation of Proton-induced SEU, Proc. 4th European Symp. "Radiation and Their Effects on Components and Systems," RADECS 97, Cannes, 1997, pp. N25-N26.