Fabrication and optical characterization of five-layer asymmetric coupled quantum well (FACQW)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2701-2706

  Suzuki, Tatsuya ^a   Noh, Joo Hyong ^a   Arakawa, Taro ^a   Tada, Kunio ^a   Okamiya, Yuuki ^a   Miyagi, Yoshitomo ^a   Sakai, Nobuaki ^a   Haneji, Nobuo ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

Five layer asymmetric coupled quantum well (facqw); Migration enhanced epitaxy (MEE); Optical modulator; Optical switch; Quantum well

Indexed keywords

ELECTRIC POTENTIAL; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; LIGHT MODULATORS; OPTICAL SWITCHES; PHOTOLUMINESCENCE;

FIVE-LAYER ASYMMETRIC COUPLED QUANTUM WELL (FACQW); MIGRATION-ENHANCED EPITAXY (MEE);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0013168702     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2701     Document Type: Article

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